inchange semiconductor product specification silicon pnp power transistors 2SB772 description ? ? with to-126 package ? complement to type 2sd882 applications ? suited for the output stage of 3 watts audio amplifier ,voltage regulator ,dc- dc converter and relay driver pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -40 v v ceo collector-emitter voltage open base -30 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -7 a t a =25 ?? 1.0 p d total power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB772 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -30 v v cesat collector-emitter saturation voltage i c =-2.0a; i b =-0.2a -0.3 -0.5 v v besat base-emitter saturation voltage i c =-2.0a ;i b =-0.2a -1.0 -2.0 v i cbo collector cut-off current v cb =-30v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-3v; i c =0 -1.0 | a h fe-1 dc current gain i c =-20ma ; v ce =-2v 30 h fe-2 dc current gain i c =-1a ; v ce =-2v 60 400 f t transition frequency i c =-0.1a ; v ce =-5v 80 mhz c ob collector output capacitance i e =0; f=1mhz ; v cb =-10v 55 pf ? h fe-2 classifications r q p e 60-120 100-200 160-320 200-400
inchange semiconductor product specification 3 silicon pnp power transistors 2SB772 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon pnp power transistors 2SB772
inchange semiconductor product specification 5 silicon pnp power transistors 2SB772
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